In the field of stretchable electronics, eutectic gallium–indium alloys (EGaIn) have become an ideal conductive material due to their exceptional electrical conductivity and natural …Web

The analysis of constant gate bias stress indicated that the anomalous hump was influenced by the migration of positively charged mobile interstitial zinc ion towards the top side of the a-IGZO channel layer. ..., title={Anomalous Stress-Induced Hump Effects in Amorphous Indium Gallium Zinc Oxide TFTs}, author={Yu-Mi Kim and Kwang-Seok …Web

Indium–zinc oxide (IZO) thin films were fabricated by spin coating using acetate- and nitrate-based precursors, and thin film transistors (TFTs) were further fabricated employing the IZO films as the active channel layer. The impact of the indium concentration on the properties of the solutions, the structure and optical transmittance …Web

Gallium is part of the boron group. It has a dangerously high melting point of 29°C. This means it can melt in your hand by simply holding it in your warm hands. It has the highest melting point of any metal that can be melted with a hand-held lighter. It will dissolve in stomach acids in its elemental form if ingested.Web

Due the relatively low binding energy of hydrogen on gallium and indium, compared to palladium, ... The volume available for a hydrogen atom was calculated to be negative here and this resulted in anomalous entropies. In these cases, total loss of gas-phase entropy (as calculated by the Shomate equation for molecular hydrogen) was …Web

The objective of this work is to demonstrate the multiplicity and separability of phenomenologies present in the gallium–aluminum and gallium–indium–aluminum …Web

Source/drain series-resistance effects in amorphous gallium-indium zinc-oxide thin film transistors. IEEE Electron Device Lett., 29 (8) (2008), p. 879. View in Scopus Google Scholar [15] S. Luan, G.W. Neudeck. An experimental study of the source/drain parasitic resistance effects in amorphous silicon thin film transistors.Web

Explanation: Boron shows anomalous behaviour with the other members of the group because of the smallest size and the group, highest ionization energy, highest electronegativity in the group, absence of vacant d- orbital and the allotropy, while the other members do not show. ... Gallium and indium do not react with cold or hot water but ...Web

Transparent amorphous Indium-Gallium-Zinc-oxide thin films transistors (a-IGZO TFTs) were fabricated using spin-coating technique at a relative low annealing temperature of 300 °C. The effects of the gallium (Ga) concentration on the properties of the IGZO solutions, the optical properties of the a-IGZO films,and the a-IGZO TFTs device …Web

The anomalous gallium-enriched sediments originated from a complex combination of hydrothermal fluids, original biomass and terrigenous materials. For the M 1 stone coal-bearing seams, gallium most likely occurred in the mode of GaAs, Ga x In 1-x As and GaO(OH), while modes of gallium in the M 2 to M 4 seams is interrelated with the …Web

This paper reports on the dielectric functions of liquid gallium and the eutectic gallium indium (EGaIn) alloy from 1.24 to 3.1 eV at room temperature, measured by …Web

We investigate positive bias stress (PBS)-induced hump behavior in the subthreshold current region of the transfer characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). We analyze the origin of hump creation as parasitic edge conduction using both experiment and simulation. Based on the simulated …Web

To understand the anomalous hump phenomena in Figs 2 and 3, ... The Mobility Enhancement of Indium Gallium Zinc Oxide Transistors via Low-temperature Crystallization using a Tantalum Catalytic Layer.Web

This study examined the effects of the indium fraction in indium zinc oxide (IZO) on the performance and stability of IZO thin film transistors (TFTs). The field-effect mobility and sub-threshold swing were much improved with increasing In fraction; 41.0 cm2/Vs and 0.2 V/decade, respectively, at 85 at. % In, compared to 1.1 cm2/Vs and 2.4 …Web

resolved as a separate peak in amorphous gallium films(CN = 9.3).11 Besides covalent Ga−Ga bonds in the firstcoordination shell, rearrangements in the …Web

The liquid metal used was a eutectic alloy of gallium and indium (eGaIn) obtained from The Indium Corporation as a pre-alloyed liquid with a composition of 75.5Ga–24.5In in weight percent. Pure gallium was obtained from Alfa …Web

Phase Separation and Anomalous Volume Expansion in Frozen Microscale Eutectic Indium-Gallium upon Remelting. The eutectic Ga-In (EGaIn) alloy has low …Web

High-Performance Indium Gallium Tin Oxide Transistors with an Al 2 O 3 Gate Insulator Deposited by Atomic Layer Deposition at a Low Temperature of 150 °C: ... into the Al 2 O 3 film, which negatively impacted the carrier mobility and caused anomalous photo-bias instability in the IGTO transistor.Web

We report the effect of H 2 plasma treatment on amorphous indium–gallium–zinc–oxide (a-IGZO) thin-film transistor (TFT). The changes in electrical characteristics and stability of the a-IGZO TFT treated by H 2 plasma were evaluated under thermal stress. Each device exhibited a change in the subthreshold swing, turn on …Web

We report a high-mobility transparent Indium-Gallium-Zinc-Oxide (IGZO) thin-film transistor ... Lee H.-D. and Lee G.-W. 2013 Investigation of zinc interstitial ions as the origin of anomalous stress-induced hump in amorphous indium gallium zinc oxide thin film transistors Appl. Phys. Lett. 102 173502. Crossref; Google Scholar [27.]Web

Download a PDF of the paper titled Phase Separation and Anomalous Volume Expansion in Frozen Microscale Eutectic Indium-Gallium upon Remelting, by Se-Ho Kim and 4 other authors Download PDF Abstract: The eutectic Ga-In (EGaIn) alloy has low vapor pressure, low toxicity, high thermal and electrical conductivities, and thus has …Web

This paper reports on the dielectric functions of liquid gallium and the eutectic gallium indium (EGaIn) alloy from 1.24 to 3.1 eV at room temperature, measured by spectroscopic ellipsometry.Web

Journal Article: Anomalous Behavior of Negative Bias Illumination Stress Instability in an Indium Zinc Oxide Transistor: A Cation Combinational ApproachWeb

In this paper, we investigated an anomalous hump in the bottom gate staggered amorphous indium-gallium zinc oxide thin-film transistors. During the positive gate bias stress, a positive threshold ...Web

With the aim of facilitating the high performance printed In-Ga-Zn-O (IGZO) thin-film transistors (TFTs), we present the heretofore unrecognized chemical methodology for tailoring the chemical structures of printable …Web

This study investigates the local atomic structure of liquid gallium-indium alloys by a combination of density measurements, diffraction data, and Monte-Carlo …Web

Boron (B), Aluminium (Al), Gallium (Ga), Indium (In), Thallium (Tl), and Nihonium (Nh) are the elements that make up the boron family or Group 13. ... Group 13 Elements – Important Trends and Anomalous Properties of Boron. The tri-chlorides, tri-bromides, and tri-iodides of all these elements, being covalent in nature, are hydrolysed in water.Web

Phase Separation and Anomalous Volume Expansion in Frozen Microscale Eutectic Indium-Gallium upon Remelting Se-Ho Kim,a Leigh T. Stephenson,a Alisson K. da Silva,a Baptiste Gault,*a,b Ayman A. El-Zoka*a a. Max-Planck-Institut für Eisenforschung , Max-Planck-Straße 1, 40237 Düsseldorf, Germany.Web

This study investigates the local atomic structure of liquid gallium-indium alloys by a combination of density measurements, diffraction data, and Monte-Carlo simulation via the empirical potential structure refinement approach. ... Mixing with indium appears to "dilute" the anomalous properties of liquid Ga and especially on the indium ...Web

We reveal an overlooked thermal-stimulus-response behaviour for frozen mesoscale EGaIn at cryogenic temperatures, with a sudden apparent volume expansion observed during in-situ heat-cycling, associated with the immiscibility between Ga and In …Web

Phase separation and anomalous shape transformation in frozen microscale eutectic indium-gallium upon remelting - ScienceDirect Abstract Introduction Section …Web

Gallium-tin oxide (GTO) semiconductor thin films were prepared by spin-coating with 2-methoxyethanol as the solvent. Their crystal structures, optical transparency, chemical states and surface morphologies, along with the electrical properties, were dependent on Ga contents and annealing temperatures. The optimized GTO channel …Web